BSC750D65M1G001

650V/75A SiC MOSFET for High-Efficiency Power Conversion

BSC750D65M1G001

Product Overview

The BSC750D65M1G001 is a high-performance Silicon Carbide (SiC) MOSFET designed for high-efficiency, high-frequency power conversion applications. This device offers superior switching performance, low on-resistance, and excellent thermal characteristics, making it ideal for automotive, industrial, and renewable energy applications.

Key Features

  • 650V blocking voltage capability
  • 75A continuous drain current
  • Ultra-low on-resistance (RDS(on))
  • High switching frequency capability up to 100kHz
  • Low gate charge for reduced switching losses
  • Excellent thermal performance
  • AEC-Q101 qualified for automotive applications

Key Specifications

Part Number BSC750D65M1G001
Technology SiC MOSFET
Voltage Rating 650V
Current Rating 75A
Package TO-247-3
RDS(on) @ 25Ā°C 12mĪ© (typ)
Gate Threshold 2.5V (typ)
Operating Temp -55Ā°C to +175Ā°C

Documents

šŸ“„ Datasheet (PDF) šŸ“Š SPICE Model šŸ”§ Application Note šŸ“‹ Reference Design

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Applications

šŸš— EV Traction Inverters

High-efficiency motor drive systems for electric vehicles

šŸ”Œ Onboard Chargers

Fast charging systems for electric vehicles

ā˜€ļø Solar Inverters

High-frequency DC-AC conversion for photovoltaic systems

šŸ­ Industrial Drives

Variable frequency drives and servo systems