BYD IGBT Module BSM150D12P2H001
Available in Global Markets
Key Features
- 1200V blocking voltage, 150A current rating
- Ultra-compact 80x100mm package
- Low saturation voltage VCE(sat) = 1.45V @ 125°C
- Excellent power density and thermal management
- AEC-Q101 automotive qualified
- Operating temperature: -40°C to +175°C
Distributor's Technical Review
Senior FAE Engineer
"The BSM150D12P2H001 is a breakthrough in power density. Despite being our smallest IGBT module, it delivers exceptional performance for 150A applications. Japanese customers particularly appreciate its precision engineering for robotics and automated equipment, while German automotive suppliers use it for compact auxiliary systems."
Highest power-to-size ratio in class
Japanese-standard quality control
Perfect for compact system designs
Size Comparison & Space Savings
Footprint Comparison (150A Class)
160x120mm
100x80mm
Space-Saving Benefits
- Compact System Design: Enable smaller inverter enclosures
- Weight Reduction: Critical for mobile and aerospace applications
- Cost Optimization: Reduce PCB size and assembly costs
- Thermal Efficiency: Better heat dissipation per unit area
- Installation Flexibility: Fit in tight spaces
Ideal Applications
Industrial Robotics
Perfect for robotic joint drives where space is at premium. Ultra-compact design allows integration directly into robot joints.
Electric Aviation
Lightweight and compact for electric aircraft propulsion systems, drones, and urban air mobility vehicles.
Compact Auxiliary Drives
Ideal for electric vehicle auxiliary systems like power steering, brake boosters, and cooling pumps.
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | - | - | 1200 | V | VGE = 0V |
| Continuous Collector Current | IC | - | - | 150 | A | TC = 25°C |
| Pulsed Collector Current | ICM | - | - | 300 | A | tpulse = 1ms |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 1.45 | 1.8 | V | IC = 150A, VGE = 15V, TC = 125°C |
| Gate-Emitter Threshold Voltage | VGE(th) | 5.0 | 6.0 | 7.0 | V | IC = 7.5A, TC = 25°C |
| Turn-on Delay Time | td(on) | - | 25 | - | ns | Inductive load |
| Turn-off Delay Time | td(off) | - | 100 | - | ns | Inductive load |
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Operating Junction Temperature | Tj | -40 to +175 | °C | - |
| Storage Temperature | Tstg | -40 to +125 | °C | - |
| Thermal Resistance Junction-Case | Rth(j-c) | 0.19 | °C/W | Per IGBT |
| Thermal Resistance Case-Heatsink | Rth(c-h) | 0.04 | °C/W | With thermal compound |
| Maximum Power Dissipation | Ptot | 920 | W | TC = 25°C |
Package Information
- Package Type: Ultra-Compact PIM
- Mounting: Surface mount with M4 screws
- Terminal Type: Solder pins
- Insulation: 2.5kV AC (rms)
Physical Dimensions
| Dimension | Min (mm) | Typ (mm) | Max (mm) |
|---|---|---|---|
| Length (L) | - | 80 | - |
| Width (W) | - | 100 | - |
| Height (H) | - | 22 | - |
| Weight | - | 320 | g |
Frequently Asked Questions
Despite its compact size, the BSM150D12P2H001 maintains excellent efficiency with VCE(sat) of just 1.45V. The advanced chip design and optimized packaging ensure thermal performance comparable to larger modules while offering superior power density.
The module is designed for standard cooling methods. While compact, the optimized thermal path and low thermal resistance (0.19°C/W) allow effective heat removal with conventional heatsinks. For high-power applications, forced air cooling is recommended.
Japan leads in demand for precision robotics applications, followed by Germany for automotive auxiliary systems. Korea shows strong growth in consumer electronics, while India focuses on cost-sensitive industrial applications. Vietnam and Mexico primarily use for space-constrained e-mobility solutions.
We recommend the BIM75 micro gate driver, specifically designed for ultra-compact applications. It matches the module's small footprint while providing optimal drive characteristics.
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