Motor Drive System Design with BYD IGBT Modules
Complete guide to designing efficient motor drive systems using BYD automotive-grade IGBT modules.
Read More ?/a>"This 1200V/1200A IGBT module is a star product from BYD for NEV main inverters. Our FAE team has validated its exceptional short-circuit withstand capability and extremely low switching losses in multiple projects with leading automakers. It's an ideal choice for electric drive systems pursuing high power density and reliability."
Tested in over 50 automotive projects
AEC-Q101 qualified for automotive use
Up to 98.5% inverter system efficiency
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCES | - | - | 1200 | V | VGE = 0V |
Continuous Collector Current | IC | - | - | 1200 | A | TC = 25°C |
Pulsed Collector Current | ICM | - | - | 2400 | A | tpulse = 1ms |
Collector-Emitter Saturation Voltage | VCE(sat) | - | 1.7 | 2.1 | V | IC = 1200A, VGE = 15V, TC = 125°C |
Gate-Emitter Threshold Voltage | VGE(th) | 5.0 | 6.0 | 7.0 | V | IC = 50A, TC = 25°C |
Turn-on Delay Time | td(on) | - | 40 | - | ns | Inductive load |
Turn-off Delay Time | td(off) | - | 150 | - | ns | Inductive load |
Parameter | Symbol | Value | Unit | Conditions |
---|---|---|---|---|
Operating Junction Temperature | Tj | -40 to +175 | °C | - |
Storage Temperature | Tstg | -40 to +125 | °C | - |
Thermal Resistance Junction-Case | Rth(j-c) | 0.024 | °C/W | Per IGBT |
Thermal Resistance Case-Heatsink | Rth(c-h) | 0.010 | °C/W | With thermal compound |
Maximum Power Dissipation | Ptot | 6250 | W | TC = 25°C |
Dimension | Min (mm) | Typ (mm) | Max (mm) |
---|---|---|---|
Length (L) | - | 140 | - |
Width (W) | - | 190 | - |
Height (H) | - | 30 | - |
Weight | - | 1200 | - |
High-performance isolated gate driver specifically designed for BYD IGBT modules
View DetailsHigh-precision current sensor for motor control and power monitoring applications
View Details(For reference only - to highlight BYD advantages)
The maximum junction temperature for the BSM1200D12P2C01s is 175°C. This automotive-grade IGBT is designed to operate reliably at high temperatures, making it suitable for demanding automotive applications where thermal management is critical.
The BSM1200D12P2C01s uses a PIM (Power Integrated Module) package with dimensions of 140mm x 190mm x 30mm (L x W x H). It features through-hole mounting with threaded studs and press-fit terminals for reliable connection. The module weighs approximately 1.2kg.
Yes, we recommend using the BIM300 isolated gate driver IC which is specifically optimized for BYD IGBT modules. Our FAE team can provide complete reference designs, including PCB layouts, component selection guidelines, and application notes. Please contact our technical team for detailed design support.
The BSM1200D12P2C01s features exceptional short-circuit withstand capability with a guaranteed minimum of 10μs at 125°C junction temperature and VDC = 800V. This robust short-circuit performance ensures system safety and reliability in automotive applications.
Yes, with a 1200V blocking voltage rating, the BSM1200D12P2C01s is well-suited for 800V automotive systems, providing adequate voltage margin for safe operation. It's commonly used in high-voltage NEV traction inverters and has been validated in numerous 800V vehicle platforms.
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