BYD Semiconductor has announced the launch of its next-generation Silicon Carbide (SiC) MOSFET series, specifically designed for electric vehicle applications. The new BSC series offers significant improvements in efficiency, thermal performance, and switching characteristics compared to previous generations.
The new product line includes both 650V and 1200V variants, targeting key EV applications including traction inverters, on-board chargers, DC-DC converters, and charging infrastructure. These devices represent a major advancement in SiC technology, offering automotive customers enhanced performance and reliability.
Key Product Features
⚡ Ultra-Low RDS(on)
Industry-leading on-resistance reduces conduction losses by up to 30%
🔥 Superior Thermal Performance
Advanced packaging technology for improved thermal management
⚡ Fast Switching
Optimized gate structure for reduced switching losses and EMI
🛡️ Robust Design
AEC-Q101 qualified with enhanced avalanche capability
Product Specifications
650V SiC MOSFETs
Part Number | RDS(on) @ 25°C | ID @ 25°C | Package | Applications |
---|---|---|---|---|
BSC065N08NS7 | 6.5mΩ | 80A | TO-247-4L | OBC, DC-DC |
BSC040N08NS7 | 4.0mΩ | 120A | TO-247-4L | OBC, Charging |
BSC025N08NS7 | 2.5mΩ | 160A | TO-264-7L | High-power OBC |
1200V SiC MOSFETs
Part Number | RDS(on) @ 25°C | ID @ 25°C | Package | Applications |
---|---|---|---|---|
BSC080N12NS7 | 8.0mΩ | 60A | TO-247-4L | Traction inverter |
BSC040N12NS7 | 4.0mΩ | 100A | TO-247-4L | Traction inverter |
BSC020N12NS7 | 2.0mΩ | 200A | TO-264-7L | High-power traction |
Technology Innovations
Advanced Trench MOSFET Structure
The new BSC series utilizes BYD's latest trench MOSFET technology, featuring:
- Optimized cell design for reduced specific on-resistance
- Enhanced gate oxide reliability
- Improved short-circuit withstand capability
- Reduced gate charge for faster switching
Innovative Packaging Solutions
The devices are available in advanced packaging options:
- TO-247-4L: Kelvin source connection for improved switching performance
- TO-264-7L: Enhanced thermal and electrical performance for high-power applications
- Improved thermal pad design: Better heat dissipation and thermal cycling reliability
Performance Benefits
Efficiency Improvements
Traction Inverter Application
- System efficiency: >98.5% (vs. 97.8% with previous generation)
- Power loss reduction: 35% lower than comparable Si IGBTs
- Operating frequency: Up to 100kHz switching
On-Board Charger Application
- Efficiency: >97% across full load range
- Power density increase: 40% size reduction possible
- EMI performance: Reduced filter requirements
Market Impact
The introduction of the new SiC MOSFET series addresses key market demands:
"The automotive industry is demanding higher efficiency, greater power density, and improved thermal performance. Our new SiC MOSFET series delivers on all these fronts while maintaining the reliability and cost-effectiveness that automotive customers require."
— Dr. Michael Zhang, VP of Product Development, BYD Semiconductor
Industry Trends Driving Adoption
- 800V Architecture: Growing adoption of 800V battery systems in premium EVs
- Fast Charging: Demand for higher power charging infrastructure
- Efficiency Regulations: Stricter energy efficiency requirements
- Cost Optimization: Need for system-level cost reductions
Application Examples
🚗 Main Traction Inverter
Configuration: Three-phase, 1200V devices
- Power rating: 150-400kW
- Switching frequency: 10-20kHz
- Efficiency target: >98.5%
- Coolant temperature: 65°C inlet
🔌 On-Board Charger
Configuration: Totem-pole PFC + LLC, 650V devices
- Power rating: 11-22kW
- Switching frequency: 50-100kHz
- Power factor: >0.99
- THD: <5%
⚡ DC Fast Charger
Configuration: Three-level or ANPC, 1200V devices
- Power rating: 50-350kW
- Output voltage: 200-1000VDC
- Efficiency: >96%
- Grid connection: 480VAC 3-phase
Availability and Support
The new BSC series SiC MOSFETs are available immediately through LiTong Group's global distribution network. Comprehensive support resources include:
- Evaluation Boards: Ready-to-use evaluation platforms for rapid prototyping
- Design Tools: SPICE models and thermal simulation files
- Application Notes: Detailed design guidelines and best practices
- Technical Support: Expert FAE assistance for design optimization
Pricing and Samples
Production quantities are available now with competitive pricing:
- 650V series: Starting at $8.50 in 1K quantities
- 1200V series: Starting at $15.20 in 1K quantities
- Free samples available for qualified customers
- Volume pricing available for production commitments
Future Roadmap
BYD Semiconductor's SiC technology roadmap includes several exciting developments:
- Module Integration: SiC MOSFET power modules for higher power applications
- 1700V Devices: Ultra-high voltage variants for grid applications
- Advanced Packaging: Next-generation thermal and electrical packaging
- Integration: Combined SiC power + control IC solutions